BTS141 E3045A

Smart Low Side Power Switch HITFET BTS 141 Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 28 mΩ •=Thermal shutdown with latch Current limit I D(lim) 25 A • Overload protection Nominal load current I D(ISO) 12 A • Short circuit protection Clamping energy EAS 4000 mJ • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible • AEC qualified • Green product (RoHS compliant) Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  chip on chip technology. Providing embedded protection functions. V bb + LOAD M D rain 2 dv /d t lim ita tio n 1 IN ESD O v erloa d pro te ctio n C u rre n t O ve rvoltag e p rotection lim ita tio n O ve rte m pe rature p ro te ctio n Sh ho rt circ c ircu it S ort uit pprotection ro te ctio n S o u rce 3 H IT F E T Datasheet 1 Rev. 1.3, 2008-12-10 Smart Low Side Power Switch HITFET BTS 141 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Drain source voltage VDS 60 Drain source voltage for short circuit protection Continuous input current 1) VDS(SC) 32 Value Unit V IIN mA -0.2V ≤ VIN ≤ 10V no limit VIN < -0.2V or VIN > 10V | IIN | ≤ 2 Operating temperature Tj - 40 ... +150 Storage temperature Tstg - 55 ... +150 Power dissipation Ptot 149 W EAS 4000 mJ 3000 V °C TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 12 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VLD VIN=low or high; VA =13.5 V td = 400 ms, RI = 2 Ω, ID =0,5*12A td = 400 ms, RI = 2 Ω, ID = 12A 100 84 Thermal resistance junction - case: R thJC 0.84 junction - ambient: R thJA 75 SMD version, device on PCB: 3) R thJA 45 K/W 1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3). 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.3, 2008-12-10 Smart Low Side Power Switch HITFET BTS 141 Electrical Characteristics Parameter Symbol at Tj=25°C, unless otherwise specified Values Unit min. typ. max. 60 - 73 V - - 20 µA 1.3 1.7 2.2 V µA Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current IDSS VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage VIN(th) ID = 2,7 mA Input current - normal operation, ID 2 mA @ VIN >10V. t0: tm t1 t2 Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Datasheet 5 Rev. 1.3, 2008-12-10 Smart Low Side Power Switch HITFET BTS 141 Maximum allowable power dissipation On-state resistance Ptot = f(Tc ) RON = f(Tj ); ID=12A; VIN =10V BTS 141 60 160 Ω W RDS(on) Ptot 120 100 40 max. 30 80 typ. 60 20 40 10 20 0 0 20 40 60 80 100 120 °C 0 -50 160 -25 0 25 50 75 100 °C 150 Tj 150 On-state resistance Typ. input threshold voltage R ON = f(Tj ); ID= 12A; V IN=5V VIN(th) = f(Tj); ID =2,7mA; VDS =12V 70 2.0 V Ω 50 VIN(th) RDS(on) 1.6 max. 40 1.4 1.2 1.0 typ. 30 0.8 0.6 20 0.4 10 0.2 0 -50 -25 0 25 50 75 100 °C 0.0 -50 150 Tj Datasheet -25 0 25 50 75 100 °C 150 Tj 6 Rev. 1.3, 2008-12-10 Smart Low Side Power Switch HITFET BTS 141 Typ. transfer characteristics Typ. output characteristic ID = f(VIN); VDS =12V; Tj =25°C ID = f(VDS); Tj =25°C Parameter: V IN 28 35 A A 10V 6V 5V 20 25 ID ID 4V 16 20 12 15 8 10 4 5 0 0 1 2 3 4 5 V 6 0 0 8 VIN Vin=3V 1 2 3 4 V 6 VDS Transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 K/W 0 ZthJC 10 D=0.5 0.2 10 -1 0.1 0.05 0.02 10 -2 0.01 0.005 0 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Datasheet 7 Rev. 1.3, 2008-12-10 Smart Low Side Power Switch HITFET BTS 141 Application examples: Status signal of thermal shutdown by monitoring input current R St IN µC V IN D HITFET V bb S ∆V V IN thermal shutdown ∆V = RST *IIN(3) Datasheet 8 Rev. 1.3, 2008-12-10 Smart Low Side Power Switch HITFET BTS 141 Package Outlines 1 Package Outlines 4.4 10 ±0.2 B 2.4 1) 9.25 ±0.2 A 1.3 ±0.3 0.05 4.7 ±0.5 0.1 0...0.15 1.05 2.7 ±0.3 8.5 7.55 1) 1 ±0.3 (15) 0...0.3 1.27 ±0.1 0.5 ±0.1 8˚ MAX. 0.75 ±0.1 2.54 5.08 0.1 B 0.25 A B M 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. PG-TO220-3-5-PO V03 Figure 1 PG-TO220-3-5 (Plastic Dual Small Outline Package) (RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.3, 2008-12-10 Smart Low Side Power Switch HITFET BTS 141 Revision History 2 Revision History Version Rev. 1.3 Date Changes 2008-12-10 released automotive green and robust version Package drawing updated Rev. 1.2 2008-08-11 Package information updated, removed through hole versions Rev. 1.1 2008-02-22 Package parameter (humidity and climatic) removed in Maximum ratings AEC icon and RoHS icon added Green product and AEC qualified added to the feature list added Protection footnote on Page 4 and changed front page general description Package information updated to green Green explanation added Rev. 1.0 2000-05-19 released production version Datasheet 10 Rev. 1.3, 2008-12-10 Edition 2008-12-10 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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